, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 rectifjers high efficiency, 2a ues1104 UES1105 ues1106 features ? very low forward voltage (1.15v) ? very fast recovery times (sonsec) ? small size ? convenient package description the ues1104 series is specifically designed for operation in power switching circuits operating at frequencies of at least 20 khz, absolute maximum ratings peak inverse voltage, ues1104 peak inverse voltage, UES1105 peak inverse voltage, ues1106 maximum average dc output current, 10 @ta- 25c (free air) @ tl = 50c, l = v surge current, 8.3msec thermal resistance <8 l = f," operating and storage temperature range 200v 300v .400v 1a 2a 20a 38-c/w -55c to +150c mechanical specifications ues1104 ues110s ues1106 band indicatfs cathode end. 1 *~ 3.9mm ? n s. .? , 1 250 max... "6.35mm"^ .625 min ml l fl 77mm * 03 055 typ 1.4m 11 body a nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
ues1104 UES1105 ufs1106 electrical specifications tvo* ues1104/1104hr UES1105/1105hr ues1106/1106hr piv 200v 300v 400v maximum forward voitjje tj = 25'c 1.25v @1a tp = 300ps tj = 100-c 1.15v @1a tp = 300/is maximum rewrse current ?piv.t, = 25'c 10 ljes804 uesb04hr2 ues805 ues806hr2 ues806 ues806hr2 maximum forward surge vs. number of cycles 600 500 *o 300 200 100 ii x / k- s. \ h i c v \e \- z9(t) ? thermal impedance i'c/w) ks s3 g u ? i, ? thermal impedance 2 i 10 20 50 100 200 n ? cycles of 60 hi sinewave reverse-recovery circuit 1 1dq v 1 i me , vox.) -?v ~^ ? pulse ndtts: 1. otcilloseop*: rise time ^ 3n?; input impedance = 900. 2. pulse generator; rise time < 8ns; source impedance 100. 3. current viewing resistor, non-inductive, coaxial recommended. optional high reliability (hr2) screening the fallowing to*u are performed on 100% of the devices spedfw ues804hr2.5hr2,6hr2. screen 1. high temperature 2. temperature cycle 3. hermetic seal a. fine leak b. gross leak 4. thermal impedance b. interim electrical parameters 6. high temperature reverse blocking 7. final electrical parameters mil-std-750 method 1032 1051 1071 go/no go similar to method 1040 go/no go conditions 24 hours & ta . 150c f, 20 cycles, -55 to +150*0 no dwell required @ 25c, t > 10 min. ? extremes h, helium c, liquid sage test vfandlr(025c w sine reverse, t = 48 hours, tc - 125 |
